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001			9780429325779
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008			200401s2020 onc ob 001 0 eng
040			_aOCoLC-P _beng _erda _cOCoLC-P
020			_a0429325770
020			_a9780429325779 _q(electronic bk.)
020			_a9781771888431 _q(electronic bk.)
020			_a1771888431 _q(electronic bk.)
020			_a9781000517767 _q(electronic bk. : PDF)
020			_a1000517764 _q(electronic bk. : PDF)
020			_a9781000522600 _q(electronic bk. : Mobipocket)
020			_a1000522601 _q(electronic bk. : Mobipocket)
020			_a9781000527445 _q(electronic bk. : EPUB)
020			_a1000527441 _q(electronic bk. : EPUB)
024	7		_a10.1201/9780429325779 _2doi
035			_a(OCoLC)1147972236
035			_a(OCoLC-P)1147972236
050	0	0	_aQC585
072		7	_aSCI _x000000 _2bisacsh
072		7	_aSCI _x055000 _2bisacsh
072		7	_aTEC _x008070 _2bisacsh
072		7	_aTJF _2bicssc
082	0		_a621.3815/2 _223
245	0	0	_aHigh-k gate dielectric materials : _bapplications with advanced metal oxide semiconductor field effect transistors (MOSFETs) / _cedited by Niladri Pratap Maity, PhD, Reshmi Maity, PhD, Srimanta Baishya, PhD.
264		1	_aBurlington, ON, Canada ; _aPalm Bay, Florida, USA : _bApple Academic Press, _c2020.
300			_a1 online resource.
336			_atext _btxt _2rdacontent
337			_acomputer _bc _2rdamedia
338			_aonline resource _bcr _2rdacarrier
505	0		_aMoore's Law: In the 21st Century / N.P. Maity and Reshmi Maity -- SiO2-Based MOS Devices: Leakage and Limitations / N.P. Maity and Reshmi Maity -- High-k Dielectric Materials: Structural Properties and Selection / P. Sri Harsha, K. Venkata Saravanan, and V. Madhurima -- Selection of High-k Dielectric Materials / N.P. Maity and Reshmi Maity -- Tunneling Current Density and Tunnel Resistivity: Application to High-k Material HfO2 / N.P. Maity and Reshmi Maity -- Analysis of Interface Charge Density: Application to High-k Material Tantalum Pentoxide / N.P. Maity and Reshmi Maity -- High-k Material Processing in CMOS VLSI Technology / Partha Pratim Sahu -- Tunnel FET: Working, Structure, and Modeling / Srimanta Baishya -- Heusler Compound: A Novel Material for Optoelectronic,Thermoelectric, and Spintronic Applications / D.P. Rai.
520			_a"This volume explores and addresses the challenges of high-k gate dielectric materials, one of the major concerns in the evolving semiconductor industry and the International Technology Roadmap for Semiconductors (ITRS). The application of high-k gate dielectric materials is a promising strategy that allows further miniaturization of microelectronic components (or Moore's law). This book presents a broad review of SiO2 materials, including a brief historical note of Moore's law, followed by reliability issues of the SiO2 based MOS transistor. Then it discusses the transition of gate dielectrics with an EOT ~ 1 nm and a selection of high-k materials. A review of the different deposition techniques of different high-k films is also discussed. High-k dielectrics theories (quantum tunneling effects and interface engineering theory) and applications of different novel MOSFET structures, like tunneling FET, are also covered in this book. The volume also looks at the important issues in the future of CMOS technology and presents an analysis of interface charge densities with the high-k material tantalum pentoxide. The issue of CMOS VLSI technology with the high-k gate dielectric materials is covered as is the advanced MOSFET structure, with its working, structure, and modeling. This timely volume addresses the challenges of high-k gate dielectric materials and will prove to be a valuable resource on both the fundamentals and the successful integration of high-k dielectric materials in future IC technology. Key features: Discusses the state-of-the-art in high-k gate dielectric research for MOSFET in the nanoelectronics regime, reviews high-k applications in advanced MOS transistor structures, considers CMOS IC fabrication with high-k gate dielectric materials."-- _cProvided by publisher.
588			_aOCLC-licensed vendor bibliographic record.
650		0	_aGate array circuits _xMaterials.
650		0	_aMetal oxide semiconductors _xMaterials.
650		0	_aDielectrics.
650		7	_aSCIENCE / General _2bisacsh
650		7	_aSCIENCE / Physics _2bisacsh
650		7	_aTECHNOLOGY / Electronics / Microelectronics _2bisacsh
700	1		_aMaity, Niladri Pratap, _eeditor.
700	1		_aMaity, Reshmi, _eeditor.
700	1		_aBaishya, Srimanta, _eeditor.
856	4	0	_3Taylor & Francis _uhttps://www.taylorfrancis.com/books/9780429325779
856	4	2	_3OCLC metadata license agreement _uhttp://www.oclc.org/content/dam/oclc/forms/terms/vbrl-201703.pdf
999			_c74573 _d74573