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Radiation sensors with 3D electrodes / Cinzia Da Viá, Gian-Franco Dalla Betta, Sherwood Parker.

By: Viá, Cinzia da [author.]Contributor(s): Betta, G. F. (Gian-Franco Dalla) [author.] | Parker, Sherwood [author.]Material type: TextTextSeries: Publisher: Boca Raton : CRC Press, 2019Description: 1 online resource (1 volume) : illustrations (black and white)Content type: text Media type: computer Carrier type: online resourceISBN: 9780429621598; 0429621590; 9780429619441; 0429619448; 9780429617294; 0429617291; 9780429055324; 0429055323Subject(s): Radiation -- Measurement -- Instruments | Nuclear counters | Electrodes | Silicon diodes | SCIENCE / Physics / Quantum Theory | SCIENCE / PhysicsDDC classification: 539.77 LOC classification: QD117.R3Online resources: Taylor & Francis | OCLC metadata license agreement
Contents:
Cover; Half Title; Series Page; Title Page; Copyright Page; Dedication; Contents; About the Authors; Acknowledgments; Chapter 1: Introduction; Chapter 2: Silicon Radiation Sensors; 2.1. INTRODUCTION; 2.2. INTERACTION OF RADIATION WITH SILICON; 2.2.1. Charged Particles; 2.2.2. Photons; 2.2.2.1. Photon Energy Close to the Energy Gap; 2.2.2.2. Photon Energy Much Higher Than the Energy Gap; 2.2.3. Neutrons; 2.3. SEMICONDUCTOR PHYSICS; 2.3.1. Silicon as a Detector Material; 2.3.2. The p-n Junction in Reverse Bias; 2.4. POSITION-SENSITIVE SENSORS; 2.4.1. Pad (Diode); 2.4.2. Strip Sensors
2.4.3. Pixel Sensors2.4.4. Drift Detector; 2.5. SIGNAL FORMATION; 2.5.1. Charge Motion; 2.5.2. Induced Signals; 2.6. READOUT ELECTRONICS AND NOISE; 2.6.1. Energy Resolution; 2.6.2. Electronic Noise; Chapter 3: Radiation Effects in Silicon Sensors; 3.1. INTRODUCTION; 3.2. RADIATION DAMAGE IN SILICON; 3.2.1. Surface Damage; 3.2.2. Bulk Damage; 3.3. CAN RADIATION DAMAGE BE CONTROLLED?; 3.3.1. Surface Damage; 3.3.2. Bulk Damage; Chapter 4: 3D Sensors; 4.1. BASIC CONCEPT; 4.2. DEVICE SIMULATIONS; 4.3. EXPERIMENTAL RESULTS; 4.4. ALTERNATIVE 3D DESIGNS; 4.4.1. Single-Type-Column 3D Detectors
4.4.2. Double-Sided Double-Type-Column 3D detectors4.4.3. Trenched Electrodes; 4.4.4. The Pixelated Vertical Drift Detector; 4.4.5. Dual Readout in 3D Sensors; 4.5. ACTIVE AND SLIM EDGES IN 3D SENSORS; Chapter 5: Fabrication Technologies; 5.1. GENERAL ASPECTS OF SILICON DETECTOR PROCESSING; 5.1.1. Materials; 5.1.2. Technological Aspects; 5.1.2.1. Passivation Oxide Deposition; 5.1.2.2. Silicon Nitride and Polysilicon Deposition; 5.1.2.3. Junction Fabrication; 5.1.2.4. Etching and Metallization; 5.1.2.5. Gettering; 5.2. DEEP ETCHING TECHNIQUES; 5.2.1. Deep Reactive Ion Etching
5.2.2. Other Etching Techniques5.3. FULL 3D DETECTORS WITH ACTIVE EDGE; 5.4. ALTERNATIVE APPROACHES; 5.5. RECENT DEVELOPMENTS; Chapter 6: Radiation Hardness in 3D Sensors; 6.1. INTRODUCTION; 6.2. SOME HISTORY: INITIAL IRRADIATION TESTS; 6.3. DEVICES WITH A DIFFERENT ELECTRODE CONFIGURATION; 6.4. RADIATION HARDNESS OF 3D-STC (OR SEMI-3D) DETECTORS (FBK, VTT); 6.5. RADIATION HARDNESS OF 3D-DDTC DETECTORS (FBK, CNM); Chapter 7: The Industrialization Phase; 7.1. INTRODUCTION; 7.2. DESIGN SPECIFICATIONS AND COMMON WAFER LAYOUT; 7.3. SENSOR ELECTRICAL SPECIFICATIONS
7.4. PROTOTYPE FABRICATION AND IBL SENSOR PRODUCTION STRATEGY7.5. EXPERIMENTAL RESULTS; 7.6. LESSONS LEARNED; Chapter 8: Planar Active-Edge Sensors; 8.1. INTRODUCTION; 8.2. DIFFERENT APPROACHES TO EDGELESS SENSORS; 8.2.1. Early Attempts; 8.2.2. The Scribe-Cleave-Passivate Technique; 8.3. ACTIVE-EDGE TECHNOLOGIES; 8.4. RESULTS; 8.5. ALTERNATIVE SOLUTIONS FOR SLIM EDGES; Chapter 9: Applications; 9.1. HIGH-ENERGY PHYSICS; 9.2. 3D SPEED PROPERTIES; 9.3. MEDICAL IMAGING; 9.4. PROTEIN CRYSTALLOGRAPHY AND MICRODOSIMETRY; 9.5. NEUTRON DETECTORS
Summary: Written by the leading names in this field, this book introduces the technical properties, design and fabrication details, measurement results, and applications of three-dimensional silicon radiation sensors. Such devices are currently used in the ATLAS experiment at the European Centre for Particle Physics (CERN) for particle tracking in high energy physics. These sensors are the radiation hardest devices ever fabricated and have applications in ground-breaking research in neutron detection, medical dosimetry and space technologies and more. Chapters explore the essential features of silicon particle detectors, interactions of radiation with matter, radiation damage effects, and micro-fabrication, in addition to a providing historical overview of the field. This book will be a key reference for students and researchers working with sensor technologies. Features: The first book dedicated to this unique and growing subject area, which is also widely applicable in high-energy physics, medical physics, space science and beyond Authored by Sherwood Parker, the inventor of the concept of 3D detectors; Cinzia Da Viaa, who has brought 3DSi technology to application; and Gian-Franco Dalla Betta, a leading figure in the design and fabrication technology of these devices Explains to non-experts the essential features of silicon particle detectors, interactions of radiation with matter, radiation damage effects, and micro-fabrication
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Cover; Half Title; Series Page; Title Page; Copyright Page; Dedication; Contents; About the Authors; Acknowledgments; Chapter 1: Introduction; Chapter 2: Silicon Radiation Sensors; 2.1. INTRODUCTION; 2.2. INTERACTION OF RADIATION WITH SILICON; 2.2.1. Charged Particles; 2.2.2. Photons; 2.2.2.1. Photon Energy Close to the Energy Gap; 2.2.2.2. Photon Energy Much Higher Than the Energy Gap; 2.2.3. Neutrons; 2.3. SEMICONDUCTOR PHYSICS; 2.3.1. Silicon as a Detector Material; 2.3.2. The p-n Junction in Reverse Bias; 2.4. POSITION-SENSITIVE SENSORS; 2.4.1. Pad (Diode); 2.4.2. Strip Sensors

2.4.3. Pixel Sensors2.4.4. Drift Detector; 2.5. SIGNAL FORMATION; 2.5.1. Charge Motion; 2.5.2. Induced Signals; 2.6. READOUT ELECTRONICS AND NOISE; 2.6.1. Energy Resolution; 2.6.2. Electronic Noise; Chapter 3: Radiation Effects in Silicon Sensors; 3.1. INTRODUCTION; 3.2. RADIATION DAMAGE IN SILICON; 3.2.1. Surface Damage; 3.2.2. Bulk Damage; 3.3. CAN RADIATION DAMAGE BE CONTROLLED?; 3.3.1. Surface Damage; 3.3.2. Bulk Damage; Chapter 4: 3D Sensors; 4.1. BASIC CONCEPT; 4.2. DEVICE SIMULATIONS; 4.3. EXPERIMENTAL RESULTS; 4.4. ALTERNATIVE 3D DESIGNS; 4.4.1. Single-Type-Column 3D Detectors

4.4.2. Double-Sided Double-Type-Column 3D detectors4.4.3. Trenched Electrodes; 4.4.4. The Pixelated Vertical Drift Detector; 4.4.5. Dual Readout in 3D Sensors; 4.5. ACTIVE AND SLIM EDGES IN 3D SENSORS; Chapter 5: Fabrication Technologies; 5.1. GENERAL ASPECTS OF SILICON DETECTOR PROCESSING; 5.1.1. Materials; 5.1.2. Technological Aspects; 5.1.2.1. Passivation Oxide Deposition; 5.1.2.2. Silicon Nitride and Polysilicon Deposition; 5.1.2.3. Junction Fabrication; 5.1.2.4. Etching and Metallization; 5.1.2.5. Gettering; 5.2. DEEP ETCHING TECHNIQUES; 5.2.1. Deep Reactive Ion Etching

5.2.2. Other Etching Techniques5.3. FULL 3D DETECTORS WITH ACTIVE EDGE; 5.4. ALTERNATIVE APPROACHES; 5.5. RECENT DEVELOPMENTS; Chapter 6: Radiation Hardness in 3D Sensors; 6.1. INTRODUCTION; 6.2. SOME HISTORY: INITIAL IRRADIATION TESTS; 6.3. DEVICES WITH A DIFFERENT ELECTRODE CONFIGURATION; 6.4. RADIATION HARDNESS OF 3D-STC (OR SEMI-3D) DETECTORS (FBK, VTT); 6.5. RADIATION HARDNESS OF 3D-DDTC DETECTORS (FBK, CNM); Chapter 7: The Industrialization Phase; 7.1. INTRODUCTION; 7.2. DESIGN SPECIFICATIONS AND COMMON WAFER LAYOUT; 7.3. SENSOR ELECTRICAL SPECIFICATIONS

7.4. PROTOTYPE FABRICATION AND IBL SENSOR PRODUCTION STRATEGY7.5. EXPERIMENTAL RESULTS; 7.6. LESSONS LEARNED; Chapter 8: Planar Active-Edge Sensors; 8.1. INTRODUCTION; 8.2. DIFFERENT APPROACHES TO EDGELESS SENSORS; 8.2.1. Early Attempts; 8.2.2. The Scribe-Cleave-Passivate Technique; 8.3. ACTIVE-EDGE TECHNOLOGIES; 8.4. RESULTS; 8.5. ALTERNATIVE SOLUTIONS FOR SLIM EDGES; Chapter 9: Applications; 9.1. HIGH-ENERGY PHYSICS; 9.2. 3D SPEED PROPERTIES; 9.3. MEDICAL IMAGING; 9.4. PROTEIN CRYSTALLOGRAPHY AND MICRODOSIMETRY; 9.5. NEUTRON DETECTORS

Written by the leading names in this field, this book introduces the technical properties, design and fabrication details, measurement results, and applications of three-dimensional silicon radiation sensors. Such devices are currently used in the ATLAS experiment at the European Centre for Particle Physics (CERN) for particle tracking in high energy physics. These sensors are the radiation hardest devices ever fabricated and have applications in ground-breaking research in neutron detection, medical dosimetry and space technologies and more. Chapters explore the essential features of silicon particle detectors, interactions of radiation with matter, radiation damage effects, and micro-fabrication, in addition to a providing historical overview of the field. This book will be a key reference for students and researchers working with sensor technologies. Features: The first book dedicated to this unique and growing subject area, which is also widely applicable in high-energy physics, medical physics, space science and beyond Authored by Sherwood Parker, the inventor of the concept of 3D detectors; Cinzia Da Viaa, who has brought 3DSi technology to application; and Gian-Franco Dalla Betta, a leading figure in the design and fabrication technology of these devices Explains to non-experts the essential features of silicon particle detectors, interactions of radiation with matter, radiation damage effects, and micro-fabrication

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